Mots-clés de l'annonce
- Annonce en anglais
- Anglais
- Doctorat
L'offre
Your missions
Design and carry out electrical characterization and reliability tests on power devices, with a focus on GaN HEMTs, including low-temperature testing where the project requires it
Analyze experimental data to track parameter drifts and investigate degradation mechanisms
Work with the team to process data and develop ageing models
Write high-quality technical reports, project deliverables and scientific publications
Collaborate with industrial and academic partners and contribute to technical discussions within the project
Qualifications and experience
PhD or equivalent R&D experience in semiconductor physics, microelectronics, power electronics or a related field
Hands-on experience in electrical characterization and experimental testing
Professional proficiency in written and spoken English (essential); clear technical communication in French is a plus
Required skills
Solid knowledge of semiconductor physics and the operation of electronic devices
Practical experience in electrical characterization and in analyzing experimental results
Desirable skills
Knowledge of GaN HEMTs, device reliability, statistical analysis or ageing models
Familiarity with irradiation testing
Personal qualities
Scientific curiosity, rigor and critical thinking, with a genuine interest in in-depth data analysis
Strong autonomy in experimental work and in the interpretation of results
A proactive mindset: you identify obstacles early, propose solutions and keep work moving forward
Ability to prioritize and deliver in a demanding, deadline-driven international project environment
Excellent interpersonal skills and the ability to engage with industrial and academic partners
The ability to explain complex technical results clearly and concisely
La candidature se fait sur le site de IRT Saint Exupéry. QuiRecrute ne reçoit aucune donnée.